Electromagnetic shielding metal-insulator-metal capacitor structure

ABSTRACT

The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor interposer device. The semiconductor interposer device includes a substrate and a first metallization layer formed on the substrate. A first dielectric layer is formed on the first metallization layer and a second metallization layer is formed on the substrate. A first conducting line is formed in the first metallization layer and second and third conducting lines are formed in the second metallization layer. A metal-insulator-metal (MIM) capacitor is formed in the first dielectric layer and over the first conducting line. The MIM capacitor includes (i) a top capacitor electrode in the first dielectric layer and electrically coupled to the second conducting line; (ii) a bottom capacitor electrode in the first dielectric layer and above the first conducting line, wherein the bottom capacitor electrode is configured to be electrically floating; and (iii) a second dielectric layer between the top and bottom capacitor electrodes.

This application is a continuation of U.S. Non-provisional patentapplication Ser. No. 16/863,934, titled “Electromagnetic ShieldingMetal-insulator-metal Capacitor Structure,” which was filed on Apr. 30,2020, which is a divisional of U.S. Non-provisional patent applicationSer. No. 16/043,355, titled “Electromagnetic ShieldingMetal-insulator-metal Capacitor Structure,” which was filed on Jul. 24,2018 and issued as U.S. Pat. No. 10,665,550, which claims the benefit ofU.S. Provisional Patent Application No. 62/698,730, titled“Electromagnetic Shielding Metal-insulator-metal Capacitor Structure,”which was filed on Jul. 16, 2018, all of which are incorporated hereinby reference in their entireties.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (e.g., the number of interconnecteddevices per chip area) has generally increased while geometry size(e.g., the smallest component or line that can be created using afabrication process) has decreased.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the common practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofillustration and discussion.

FIG. 1 is a cross-sectional view of an exemplary shielding MIM capacitorin an interposer structure, in accordance with some embodiments.

FIG. 2 is a cross-sectional view of an exemplary shielding MIM capacitorstructure, in accordance with some embodiments.

FIGS. 3A-9B are various cross-sectional and isometric views of shieldingMIM capacitor structures, in accordance with some embodiments.

FIG. 10 is an illustration of a method for integrated circuit componentsplacement flow, in accordance with some embodiments.

FIG. 11 is an illustration of an exemplary computer system forimplementing various embodiments of the present disclosure, inaccordance with some embodiments.

FIG. 12 is an illustration of a process to form circuit layouts based ona graphic database system (GDS) file, in accordance with someembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over a second feature in the description that followsmay include embodiments in which the first and second features areformed in direct contact, and may also include embodiments in whichadditional features are disposed between the first and second features,such that the first and second features are not in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition does not in itselfdictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The term “nominal” as used herein refers to a desired, or target, valueof a characteristic or parameter for a component or a process operation,set during the design phase of a product or a process, together with arange of values above and/or below the desired value. The range ofvalues can be due to slight variations in manufacturing processes ortolerances.

The term “substantially” as used herein indicates the value of a givenquantity that can vary based on a particular technology node associatedwith the subject semiconductor device. Based on the particulartechnology node, the term “substantially” can indicate a value of agiven quantity that varies within, for example, ±5% of a target (orintended) value.

The term “about” as used herein indicates the value of a given quantitythat can vary based on a particular technology node associated with thesubject semiconductor device. Based on the particular technology node,the term “about” can indicate a value of a given quantity that varieswithin, for example, 5-30% of the value (e.g., ±5%, ±10%, ±20%, or ±30%of the value).

Capacitors are elements that are used in semiconductor devices forstoring electrical charges. Capacitors are used in, for example,filters, analog-to-digital converters, memory devices, controlapplications, and many other types of semiconductor devices. One type ofcapacitor is a metal-insulator-metal (MIM) capacitor. The MIM capacitorcan be formed with two conductive plates in parallel and a dielectriclayer sandwiched in between. MIM capacitor can be used as decouplingcapacitors that are built into chips to prevent voltage spikes in apower supply such as, for example, when the chip is initially powered orwhen various components of the chip are activated. Since the powersupply cannot instantaneously respond to such power demand changes, thechip's power voltage can change for a brief period until the powersupply can respond and stabilize the voltage. Voltage spikes may occurduring this transient time. Decoupling capacitors can suppress thesevoltage spikes. Spike suppression performance can improve withdecoupling capacitors that feature higher capacitance. In a chipfabrication process, decoupling capacitors can be integrated in the farback end of the line during or after packaging of the chip. Decouplingcapacitors can be integrated into a three-dimensional (“3D”) ICpackaging such as, for example, a chip-on-wafer-on-substrate (CoWoS)chip package or an integrated fan-out (InFO) chip package. Decouplingcapacitors formed as part of an interposer of a CoWoS and InFO chippackage can have a MIM structure that includes a high dielectricconstant (high-k) insulator (e.g., dielectric constant higher than 3.9).

IC packaging has evolved such that multiple ICs can be verticallystacked in the 3D packages in order to save horizontal area on a printedcircuit board (“PCB”). An alternative packaging technique, referred toas a “2.5D package,” can use an interposer structure, which may beformed from a semiconductor material, such as silicon, for coupling oneor more semiconductor dies to a PCB. ICs or other semiconductor dies,which may incorporate heterogeneous technologies, can be mounted on theinterposer. In addition to being joined to the IC dies, the interposercan also be joined to the PCB and to a package substrate disposedbetween the PCB and the interposer.

However, stacking multiple devices on one or more semiconductor dies cancause electrical noise and create electromagnetic (“EM”) interferencedue to EM emissions from adjacent devices. RF devices and inductors areexamples of devices which can create electrical noise and EMinterference. In addition, electrical devices can also couple to powerline structures and cause undesirable cross talk or cross coupling.Sources, such as an RF transmitter or receiver, generates electric noisein the form of EM emissions that can propagate through dielectriclayers. Electrical noise carried in conductive structures, such assignal or power lines, can also propagate through the dielectric layers.A signal line can be connected to a signal source and transmittime-varying electrical signals (e.g., signals that change over time).In some embodiments, the signal lines can also be connected to a signalsource that transmits a direct current (DC) signal. A power line can beconnected to power sources and transmit power supply to variouscomponents of the circuit. The EM emissions and the electrical signalscarried in the signal lines can impact various other signals and devicesin a semiconductor device, other semiconductor dies coupled to theinterposer, and other components in the semiconductor package. Noisyelectrical signals and EM emissions therefore present challenges insemiconductor packaging.

Various embodiments in accordance with this disclosure providemechanisms of forming a shielding metal-insulator-metal (MIM) capacitorstructure to provide EM shielding for EM emissions in semiconductordevices. According to the present disclosure, the shielding MIMcapacitor can mitigate power line ripple (e.g., current fluctuations) ordecouple one circuit component from another circuit component of anelectrical circuit structure, such as interposer structure. ShieldingMIM capacitors can include parallel conductive plates that can act asFaraday shields to shield devices and structures from EM emission sourceand prevents EM interference in other circuit components, such asdevices formed on another die or other components coupled to theinterposer structure. Without using additional mask layers, theshielding MIM capacitor structure can be incorporated into decouplingcapacitors for power/ground supplies to eliminate routing penalty andminimize device footprint. In accordance with some embodiments of thisdisclosure, the shielding MIM capacitor structure provides, among otherthings, benefits of: (i) improved power, performance, area (PPA) designby strategically placing shielding MIM capacitors between metal layersto serve as shielding capacitors, decoupling capacitors, or both; (ii)compatibility with current layout design and process flow without theneed for additional masks; and (iii) diverse EM shielding protection inthe vertical direction for upper/lower layers and horizontal directionfor adjacent structures.

FIG. 1 illustrates a cross-sectional view of an interposer 100incorporating a shielding MIM capacitor structure, in accordance withembodiments of the present disclosure. Interposer 100 includes asubstrate 102, and a contact pad 112 disposed on substrate 102. Athrough-silicon via (TSV) 108 formed in substrate 102 is electricallycoupled to contact pad 112. Though one contact pad 112 is shown in FIG.1 , in accordance with embodiments of the present disclosure, more thanone contact pad 112 can be formed over a surface of substrate 102. Forexample, there may be dozens or hundreds of contact pads 112 and TSVs108 formed on the surface of substrate 102, depending on the applicationand size of an integrated circuit die.

Substrate 102 can be a silicon substrate, according to some embodiments.In some embodiments, substrate 102 can be (i) another semiconductor,such as germanium; (ii) a compound semiconductor; (iii) an alloysemiconductor including silicon germanium (SiGe); or (iv) combinationsthereof. In some embodiments, substrate 102 can be a semiconductor oninsulator (SOI). In some embodiments, substrate 102 can be an epitaxialmaterial. Alternatively, substrate 102 can be formed of a dielectricmaterial. In some embodiments, substrate 102 can be substantially freefrom integrated circuit devices, including active devices, such astransistors and diodes. In some embodiments, substrate 102 can include,or can be free from, passive devices, such as capacitors, resistors,inductors, and/or the like.

Contact pad 112 can be formed on a surface of substrate 102 usingsubtractive etching, direct etching, damascene lithography techniques,and/or any other suitable technique. Contact pad 112 can be formed of ametal adapted to be coupled to a bump 126. Bump 126 is formed on andelectrically connected to contract pad 112. Bump 126 can include solderbumps, such as eutectic solder bumps. Alternatively, bump 126 can beformed of copper bumps or other metal bumps formed of gold, silver,nickel, tungsten, aluminum, other metals, and/or alloys thereof. Bump126 can also include Controlled Collapse Chip Connection (C4) bumps usedin semiconductor interconnection techniques such as flip chipinterconnections. In some embodiments, bump 126 can protrude from thesurface of substrate 102, as shown in FIG. 1 . A solder mask (not shown)can be formed before the formation of the bump 126 to protect the bumpmaterial from forming in undesired regions.

TSV 108 is formed on substrate 102 by extending through substrate 102,as shown in FIG. 1 . TSV 108 is formed of conductive materials such as ametal, a semiconductor material such as silicon, or combinations ormultiple layers thereof, for example.

An interconnect structure 110 is formed over substrate 102 and includesone or more insulating material layers 122 a, 122 b, 122 c, conductivelines 160 a, 160 b, and 160 c, via 164 formed in insulating materiallayer 122 c, and shielding MIM capacitor structure 180 formed betweenconductive lines 160 a and 160 b. For simplicity, other insulatingmaterial layers, conductive lines, vias, and/or capacitor structures arenot illustrated in FIG. 1 . The various layers of interconnect structure110 can be formed using etching, direct etching, damascene lithographytechniques, any suitable technique, and/or combinations thereof.

Insulating material layers 122 a, 122 b, 122 c can be intermetallicdielectric layers used to provide electrical insulation betweeninterconnect conductive lines in interposer structure 100. Insulatingmaterial layers 122 a, 122 b, 122 c can be formed of dielectricmaterials such as, for example, silicon oxide, undoped silica glass,fluorinated silica glass, other suitable materials, and/or combinationsthereof. In some embodiments, insulating material layers 122 a, 122 b,122 c are formed using a low-k dielectric material (e.g., material witha dielectric constant less than 3.9). In some embodiments, insulatingmaterial layer 122 b can include two or more insulating material layers,which are not shown in FIG. 1 for simplicity. For example, eachconductive line can be formed in a dielectric layer within insulatingmaterial layer 122 b. In some embodiments, insulating material layer 122d can be a patterned passivation layer.

Interconnect structure 110 includes one or more conductive lines thatare electrically coupled to each other or other devices through viasformed in insulating material layers. For example, conductive lines 160a, 160 b, 160 c, and 160 d are formed in insulating material layer 122 band in metallization layers of interposer structure 110. In someembodiments, conductive line 160 a can be formed in an M1 metallizationlayer, conductive lines 160 b and 160 c can be formed in an M2metallization layer, and conductive line 160 d can be formed in an M3metallization layer. Alternatively, conductive lines 160 a, 160 b, 160c, and 160 d can be formed in other metallization layers of interposerstructure 100. Vias 164-166 are formed within insulating material layersand are electrically coupled to conductive lines 160 a-160 d. Forexample, via 164 can be formed in a Via1 layer of insulating materiallayer 122 b and is electrically coupled to conductive lines 160 a and160 b. Vias 165 can be formed in Via2 layer of insulating layer 122 band are electrically coupled to conductive lines 160 c and 160 d. Insome embodiments, vias 164-166 can be formed using aluminum, aluminumalloy, copper, cobalt, any suitable metals, and/or combinations thereof.In some embodiments, interposer structure 100 can further include otherconductive lines or vias and are not illustrated in FIG. 1 forsimplicity. In some embodiments, there may be dozens or hundreds ofcontact vias and conductive lines formed within insulating materiallayer 122 b, depending on the application and size of an integratedcircuit die.

Shielding MIM capacitor 180 can be placed in insulating material layer122 b for providing EM shielding between conductive structures anddevices. In addition, shielding MIM capacitor can be configured to serveas decoupling capacitors for power/ground lines within interposerstructure 100. Therefore, without using additional mask layers, theshielding MIM capacitor structure can be incorporated into decouplingcapacitors for power/ground supplies to reduce routing penalty andminimize the device footprint. To provide EM shielding betweenconductive lines formed in the M1 metallization layer, shielding MIMcapacitor 180 can be placed between conductive lines 160 a and 160 b andalso extend between conductive lines 160 a and 160 c. Shielding MIMcapacitor 180 can be a parallel plate capacitor that includes a topmetal plate (e.g., top capacitor electrode), a bottom metal plate (e.g.,bottom capacitor electrode), and a dielectric layer in between. Thedetailed structure of shielding MIM capacitor 180 is not illustrated indetail in FIG. 1 but is described in detail in FIGS. 2-9B. To also serveas decoupling capacitor for power/ground lines or other conductive lineswithin interposer structure 100, shielding MIM capacitor 180 can becoupled to the conductive structures using through vias. For simplicity,the vias connected to shielding MIM capacitor 180 are not illustrated inFIG. 1 but described in detail in FIGS. 2-9B. In some embodiments,shielding MIM capacitors can be formed between other metallizationlayers such as, for example, M3, M4, M5 . . . etc. In some embodiments,shielding MIM capacitor 180 is formed in a dielectric layer withininsulating material layer 122 b.

A redistribution layer (RDL) can be formed on insulating material layer122 c. RDL 114 can include fan-out regions (not shown) for fanning-outthe exterior connections of an integrated circuit die to a largerfootprint on substrate 102. In some embodiments, RDL 114 can be formedusing any suitable materials such as, for example, aluminum, aluminumalloy, or other metals. In some embodiments, RDL 114 can further includefuses.

An optional under-ball metallization (UBM) structure 166 can be formedin insulating material layer 122 d and on RDL layer 114. UBM 166 caninclude conductive lines containing metal material to facilitate theformation of bump 124.

Bump 124 can be formed in a peripheral region of interposer structure100 and can include micro-bumps, according to some embodiments. Eachbump 124 can include an optional metal stud (not shown) that can beformed using copper, a copper alloy, or other metals. Bump 124 canalternatively comprise other materials. The metal studs of bump 124 canbe formed of any suitable conductive material such as, for example,copper, nickel, platinum, aluminum, and/or combinations thereof. Metalstud and bump 124 can be formed through any number of suitabletechniques, including physical vapor deposition (PVD), chemical vapordeposition (CVD), electrochemical deposition (ECD), molecular beamepitaxy (MBE), atomic layer deposition (ALD), electroplating, and thelike. An optional conductive cap layer can be formed between the metalstud and the solder of the bump 124, also not shown for simplicity. Forexample, in an embodiment in which the metal stud is formed of copper, aconductive cap layer formed of nickel may be formed. Other materials,such as platinum, gold, silver, combinations thereof, or the like, mayalso be used for the optional conductive cap layer of bump 124.

FIG. 2 is a cross-sectional view of exemplary shielding MIM capacitorstructures formed in an interposer structure 200, in accordance withsome embodiments of the present disclosure. As shown in FIG. 2 ,conductive lines 250 and 251 can be conductive lines formed in an M1metallization layer and conductive lines 260 and 261 can be formed in anM2 metallization layer of an interposer structure such as interposerstructure 100 described above in FIG. 1 . Shielding MIM capacitorstructure 280 can include a top capacitor electrode 281, a bottomcapacitor electrode 282, and a dielectric layer 283 formed in between.Top capacitor electrode 281 can be electrically connected to conductiveline 260 through via 240, while bottom capacitor electrode 282 can beelectrically connected to conductive line 261 through via 241.Similarly, conductive lines 250 and 260 can be electrically connectedtogether by via 270 while conductive lines 251 and 261 can beelectrically connected by via 271. Vias 240, 241, 270, and 271 can beformed in one or more insulating material layers (not shown) formedbetween the M1 and M2 metallization layers. In some embodiments, adistance d2 between adjacent metallization layers (e.g., M1 and M2) canbe between about 0.5 μm and about 0.8 μm (e.g., 0.5 μm and 0.8 μm). Insome embodiments, a distance d1 between top capacitor electrode 281 andconductive line 260 can be between 0.1 μm and 0.7 μm (e.g., 0.1 μm and0.7 μm). A smaller distance d1 can provide reduced EM interference asthe metal plane is brought closer in distance to the conducting line andtherefore absorbs an increased amount of EM emissions. Other structuresof interposer structures, such as other contact pads, insulatingmaterial layers, solder bumps, vias, conductive lines, etc., are omittedfrom FIG. 2 for simplicity.

In some embodiments, conductive lines 260 and 261 can be electricallyconnected to the same voltage level such as, for example, V_(SS) (e.g.,ground voltage reference) or V_(DD) (e.g., source power) of integratedcircuit power supply lines. In such scenario, shielding MIM capacitorserves as a Faraday shield that absorbs EM emission or powerline ripplesand provides optimal shielding capacity. In some embodiments, conductivelines 260 and 261 can be connected to different voltage levels. Forexample, conductive line 260 is connected to V_(DD) while conductiveline 261 is connected to V_(SS). In such scenario, shielding MIMcapacitor not only serves as a Faraday shield for providing EM shieldingbut also acts as a decoupling capacitor for conductive lines 260 and261.

Shielding MIM capacitor 280 includes top capacitor electrode 281, bottomcapacitor electrode 282, and dielectric layer 283 formed in between thetwo capacitor electrodes. In some embodiments, top capacitor electrode281 is formed from an aluminum copper alloy. In some embodiments, topcapacitor electrode 281 can be formed from other conductive materialssuch as, for example, tantalum nitride, aluminum, copper, tungsten,metal silicides, other suitable metal or metal alloys, and/orcombinations thereof. In some embodiments, top capacitor electrode 281can include more than one layer. In some embodiments, a thickness of topelectrode layer 281 can be in a range from about 200 Å to about 10000 Å(e.g., 200 Å to 10000 Å).

Dielectric layer 283 is disposed between top capacitor electrode 281 andbottom capacitor electrode 282. Dielectric layer 283 can be formed froma high-k dielectric material (e.g., material with a dielectric constantgreater than 3.9). In some embodiments, dielectric layer 283 can beformed of any suitable dielectric material such as, for example, siliconnitride (SiN_(x)). Other suitable dielectric material can be used suchas, for example, silicon oxide (SiO_(x)), hafnium oxide (HfO₂), othersuitable dielectric material, and/or combinations thereof. In someembodiments, dielectric layer 283 can include one or more layers.Capacitances of parallel plate capacitors are inversely proportional tothe dielectric layer thickness, thus the thickness of dielectric layer283 can be selected to achieve a nominal capacitance. In someembodiments, a thickness of dielectric layer 283 can be in a range fromabout 0.2 μm to about 0.8 μm (e.g., 0.2 μm to 0.8 μm).

Bottom capacitor electrode 282 is disposed under dielectric layer 283.In some embodiments, bottom capacitor electrode 282 can be formed usingthe same material as top capacitor electrode 281. In some embodiments,bottom capacitor electrode 283 can be formed using a different material.In some embodiments, a thickness of bottom capacitor electrode 282 canbe in a range from about 200 Å to about 10000 Å (e.g., 200 Å to 10000Å).

FIGS. 3A and 3B are isometric views of an exemplary shielding MIMcapacitor structure 380 formed in an interposer structure, in accordancewith some embodiments of the present disclosure. FIG. 3A illustrates ashielding MIM capacitor structure 380 formed between a pair ofconductive lines 360 and 361 formed in a metallization layer (e.g., anM2 metallization layer) and a plurality of conductive lines 351 formedin an adjacent metallization layer (e.g., an M1 metallization layer).Conductive lines 351, 360, and 361 can be similar to conductive lines251, 260, and 261 of FIG. 2 , respectively. In some embodiments,conductive lines 351, 360, and 361 can be power supply lines, signallines, circuitry of other suitable EM emitting devices, or combinationsthereof. Because shielding MIM capacitor 380 can be configured toprovide EM shielding between adjacent metallization layers, conductivelines from different metallization layers can be placed over one (e.g.,directly over) another without creating cross talk or undesirablecoupling. For example, conductive lines 360 and 361 can be placed aboveconductive lines 351 without introducing vertical cross talk between theconductive lines. As shown in FIG. 3A, conductive lines 360 and 361 areperpendicular to conductive lines 351. In some embodiments, conductivelines 360 and 361 can be parallel to conductive lines 351, as shown inFIG. 3B. Detailed structures of shielding MIM capacitor 380 such as topand bottom electrodes and dielectric layer are not illustrated in FIG.3A or 3B for simplicity. Similarly, other structures of interposerstructures, such as other contact pads, insulating material layers,solder bumps, vias, conductive lines, etc., are omitted from FIGS. 3Aand 3B for simplicity.

The dimensions of shielding MIM capacitor 380 can be determined by avariety of factors. First, a capacitance of shielding MIM capacitor 380is generally determined by its horizontal and vertical dimensions. Forexample, capacitance of a parallel plate shielding MIM capacitor 380 canbe determined by parameters such as, for example, dielectric constant ofthe dielectric material, capacitor plate dimensions, and capacitor plateseparation. The capacitance of shielding MIM capacitor 380 can becomeimportant when the shielding MIM capacitor is also used as a decouplingcapacitor. Second, one of the factors that affect shielding capabilityof a shielding MIM capacitor is capacitor surface area, where a greatercapacitor surface area can provide greater EM shielding capability.Therefore, dimensions and locations of shielding MIM capacitor 380 iscrucial and depend on device needs. In some embodiments, a width Wi ofshielding MIM capacitor 380 in the x direction can be in a range fromabout 0.5 μm to about 200 μm (e.g., 0.5 μm to 200 μm). In someembodiments, a length Li of shielding MIM capacitor 380 in the ydirection can be in a range from about 0.5 μm to about 200 μm (e.g., 0.5μm to 200 μm). In some embodiments, the thickness of top or bottomcapacitor electrodes (not shown) of shielding MIM capacitor 380 can bein a range from about 200 Å to about 10000 Å (e.g., 200 Å to 10000 Å).

FIGS. 4-9B are cross-sectional views of various exemplary shielding MIMcapacitor structure configurations formed in semiconductor structures,in accordance with some embodiments of the present disclosure. Variousconfigurations of top and bottom capacitor electrodes of shielding MIMcapacitors can provide flexibility for shielding different portions ofthe semiconductor structure as required by device needs. For example,voltage biases of the top and bottom capacitor electrodes can berespectively set to various configurations to accommodate device needs:(i) V_(SS) and V_(SS); (ii) V_(SS) and electrically floating (e.g., bynot being directly connected to an electric potential); (iii) V_(SS) andV_(DD); (iv) V_(DD) and V_(SS); (v) electrically floating and V_(SS);and any other suitable configurations. Conductive lines in these figuresare formed in M1 or M2 metallization layers of interposer structures,but it should be understood that conductive lines can also be formed inother metallization layers of suitable semiconductor devices. Otherstructures of interposer structures, such as other contact pads,insulating material layers, solder bumps, vias, conductive lines, etc.,are omitted from FIGS. 4-9B for simplicity.

FIGS. 4A-4B are cross-sectional views of exemplary shielding MIMcapacitor structures formed in semiconductor structures 400 and 402,respectively, in accordance with some embodiments of the presentdisclosure. FIGS. 4A-4B illustrate a configuration of shielding MIMcapacitor structure where it provides improved EM shielding for upperlevel metallization layers in an interposer structure. It should benoted that the configuration can also be applied to other suitablesemiconductor structures where EM shielding for upper metallizationlayers are desired.

FIG. 4A illustrates a semiconductor structure 400 which includes:conductive line 451 formed in a first metallization layer (e.g., M1metallization layer of an interposer structure); conductive lines 460,461, and 462 formed in a second metallization layer (e.g., M2metallization layer of the interposer structure); shielding MIMcapacitor structure 480 including a top capacitor electrode 481, abottom capacitor electrode 482, and a dielectric layer 483 formedbetween the two capacitor electrodes; and vias 440 and 441 betweenconductive layers 460 and 462 and top capacitor electrode 481. In someembodiments, conductive layers 460 and 462 can be electrically connectedto V_(SS), and as a result, top capacitor electrode 481 is connected tothe ground voltage reference of the integrated circuit. In thisscenario, shielding MIM capacitor 480's top and bottom capacitorelectrodes are biased to the “V_(SS)/electrically floating”configuration. In some embodiments, conductive lines 451 and 461 can beEM signals emitting lines formed in M1 and M2 metallization layers,respectively. In some embodiments, conductive lines can be connected tosignal sources and transmit time-varying signals. In some embodiments,conductive lines 451 and 461 can be power lines electrically connectedto V_(DD) of the integrated circuit. The Shielding MIM capacitor 480 canprevent cross talk (e.g., EM interference) between conductive lines 451and 461 by, for example, blocking and absorbing EM signals emitted fromconductive line 461. For example, top capacitor electrode 481 which iscloser in distance to conductive line 461 rather than to conductive line451, is electrically biased to ground reference which provides optimumEM shielding and absorbing capability in the vertical direction (e.g., zdirection). In addition, conductive lines 460 and 462 provide EMshielding and absorbing capability in the horizontal directions (e.g., xdirection). For example, conductive lines 460 and 462 can both be set toV_(SS) which absorbs and blocks EM signals propagating in the −x and xdirections. As a result, EM signals emitted by conductive line 461 canbe absorbed and blocked by the conductive lines and shielding MIMcapacitor 480.

FIG. 4B illustrates a semiconductor structure 402 which includes similarstructures as described above in FIG. 4A. Similar structures arelabelled using the same numerals and are not described in detail. Insome embodiments, conductive line 462 and via 441 can be omitted (asshown in FIG. 4B) if the device design rules emphasize eliminating crosstalk between conductive lines 451 and 461. As conductive lines 451 and462 are on opposite sides of conductive line 461, EM signals travelingin the x direction that can reach conductive line 451 is minimal. Tominimize device footprint and lower cost, conductive line 462 and via441 can be omitted.

FIG. 5 illustrates a semiconductor structure 500 which includes aconfiguration of a shielding MIM capacitor 580 for improved EM shieldingin lower level metallization layers of an interposer structure.Shielding MIM capacitor 580 can be applied to other suitablesemiconductor structures where EM shielding for upper and/or lowermetallization layers are desired. Semiconductor structure 500 includes:conductive lines 551, 552, and 553 formed in a first metallization layer(e.g., M1 metallization layer of an interposer structure); conductivelines 560, 561, 562, and 563 formed in a second metallization layer(e.g., M2 metallization layer of an interposer structure); shielding MIMcapacitor structure 580 including a top capacitor electrode 581, abottom capacitor electrode 582, and a dielectric layer 583 formedbetween the two capacitor electrodes; and vias 540, 541, and 542. Via540 forms an electrical connection between conductive lines 551 and 561.Via 542 forms an electrical connection between conductive lines 553 and563. As a result, conductive lines 551 and 561 are biased to the samevoltage level, while conductive lines 553 and 563 are biased to the samevoltage level. For example, conductive lines 551, 561, 553, and 563, canbe biased to V_(SS). In some embodiments, conductive line 562 can alsobe biased to V_(SS). In this scenario, shielding MIM capacitor's top andbottom capacitor electrodes are biased to the “electricallyfloating/V_(SS)” configuration. In some embodiments, conductive lines552 and 560 can be EM signal emitting signal lines formed in M1 and M2metallization layers, respectively. In some embodiments, conductivelines can be connected to signal sources and transmit time-varyingsignals. In some embodiments, conductive lines 552 and 560 can be powerlines that are electrically connected to V_(DD) of the integratedcircuit.

Shielding MIM capacitor structure 580 can prevent cross talk (e.g., EMinterference) between conductive lines 552 and 560 by blocking andabsorbing EM signals emitted from conductive line 552. For example,bottom capacitor electrode 582 which is closer in distance to conductiveline 552, rather than to conductive line 560, is electrically biased toground reference (e.g., V_(SS)) which provides optimum shielding andabsorbing capability in the vertical direction (e.g., z direction). Inaddition, conductive lines 561 and 551, as well as conductive lines 553and 563, provide EM shielding and absorbing capability in the horizontaldirections (e.g., x direction). For example, conductive lines 551, 561,553, and 563 can all be set to V_(SS) which absorbs and blocks EMsignals propagating in the −x and x directions. As a result, EM signalsemitted by conductive line 552 can be absorbed and blocked by theconductive lines and shielding MIM capacitor. Similar to semiconductorstructure 402 described above in FIG. 4B, as conductive lines 560 and553 are on opposite sides of conductive line 552, EM signals travelingin the x direction that can reach conductive line 560 is minimal. Tominimize device footprint and lower cost, conductive lines 553, 563, andvia 542 can be omitted, according to some embodiments.

FIG. 6 illustrates a semiconductor structure 600 which includes ashielding MIM capacitor 680 for improved EM shielding for both upper andlower level metallization layers in an interposer structure. ShieldingMIM capacitor 680 can be applied to other suitable semiconductorstructures where EM shielding for upper and/or lower metallizationlayers are desired. Semiconductor structure 600 includes: conductivelines 651, 652, and 653 formed in a first metallization layer (e.g., M1metallization layer of an interposer structure); conductive lines 660,661, 662, 663, and 664 formed in a second metallization layer (e.g., M2metallization layer of the interposer structure); shielding MIMcapacitor structure 680 including a top capacitor electrode 681, abottom capacitor electrode 682, and a dielectric layer 683 formedbetween the two capacitor electrodes; and vias 640, 641, 642, and 643.Via 640 forms an electrical connection between conductive lines 651 and660. Via 643 forms an electrical connection between conductive lines 653and 664. As a result, conductive lines 651 and 660 are biased to thesame voltage level, while conductive lines 653 and 664 are biased to thesame voltage level. For example, conductive lines 651, 660, 653, and664, can be biased to V_(SS). In some embodiments, conductive lines 661and 663 are both connected to V_(SS) of the integrated circuit, and thetop and bottom capacitor electrodes 681 and 682 are in turn biased toV_(SS) through vias 641 and 642, respectively. In this scenario,shielding MIM capacitor 680's top and bottom capacitor electrodes arebiased to the “V_(SS)/V_(SS)” configuration. In some embodiments,conductive lines 652 and 662 can be signal lines formed in M1 and M2metallization layers respectively, and emitting EM signals. In someembodiments, conductive lines can be connected to signal sources andtransmit time-varying signals. In some embodiments, conductive lines 652and 662 can be power lines electrically connected to V_(DD) of theintegrated circuit.

Shielding MIM capacitor structure 680 can prevent cross talk (e.g., EMinterference) between conductive lines 652 and 662 which allows one ormore signal carrying conductive line to be placed over (e.g., directlyover) another signal carrying conductive line, providing the benefit ofadditional routing resources. In addition, conductive lines 651 and 660,as well as conductive lines 653 and 664, provide EM shielding andabsorbing capability in the horizontal direction (e.g., x direction).For example, conductive lines 651, 660, 653, and 664 can be set toV_(SS) which absorbs and blocks EM signals propagating in the −x and xdirections. As a result, EM signals emitted by conductive lines 652 and662 can be absorbed and blocked by the conductive lines and shieldingMIM capacitor 680.

FIGS. 7A-7B respectively illustrate semiconductor structure 700 and 702which includes configuration of shielding MIM capacitors for improved EMshielding and also providing power integration in the power domain ofthe integrated circuits, according to some embodiments. FIG. 7Aillustrates semiconductor structure 700 with single decoupling capacitorfor power integration in the power domain while FIG. 7B illustratessemiconductor structure 702 with double decoupling capacitor for powerintegration in the power domain. These capacitor configurations can beapplied to other suitable semiconductor structures where EM shieldingfor metallization layers and power integration are desired.

As illustrated in FIG. 7A, semiconductor structure 700 is not onlyconfigured to include EM shielding between conductive lines 751 and 761,but also includes a decoupling capacitor for the power domain formed byconductive lines 762 and 763. Semiconductor structure 700 includes:conductive line 751 formed in a first metallization layer (e.g., M1metallization layer of an interposer structure); conductive lines 760,761, 762, 763, and 764 formed in a second metallization layer (e.g., M2metallization layer of an interposer structure); a first shielding MIMcapacitor structure 780 including a top capacitor electrode 781, abottom capacitor electrode 782, and a dielectric layer 783 formedbetween the two capacitor electrodes; a second shielding MIM capacitorstructure 784 sharing a top capacitor electrode 781 with first shieldingMIM capacitor structure 780, a bottom capacitor electrode 785, and adielectric layer 787 formed between the two capacitor electrodes; andvias 740, 741, and 742. Vias 740 and 741 form electrical connectionsbetween top capacitor electrode 781 and conductive lines 760 and 762,respectively. Via 742 forms electrical connection between conductiveline 763 and bottom capacitor electrode 785. In some embodiments,conductive line 760 is not directly electrically connected to topcapacitor electrode 781. In some embodiments, conductive lines 760 and762 are biased to the same voltage level, for example, V_(SS). In someembodiments, conductive line 763 is connected to V_(DD) of theintegrated circuit. Top capacitor electrode 781 is shared by bothshielding MIM capacitors 780 and 784.

As shown in FIG. 7A, top capacitor electrode 781 of shielding MIMcapacitor 780 is biased to V_(SS) while bottom capacitor electrode 782is electrically floating. Therefore, similar to semiconductor structure400 described above in FIG. 4A, shielding MIM capacitor 780 providesenhanced EM shielding between conductive lines 751 and 761. In addition,shielding MIM capacitor 784, which shares a common top capacitorelectrode with shielding MIM capacitor 780, also acts as a decouplingcapacitor for conductive lines 762 and 763 in the power domain of aninterposer structure. As shown in FIG. 7A, bottom capacitor electrode ofshielding MIM capacitor 784 is connected to conductive line 763. In someembodiments, conductive line 763 is biased to V_(DD) and thereforeshielding MIM capacitor 784 not only shields EM signals emitted fromconductive line 761, but also acts as a decoupling capacitor for thepower domain. In this scenario, shielding MIM capacitor 780 is biased tothe “V_(SS)/electrically floating” configuration while shielding MIMcapacitor 784 is biased to the “V_(DD)/V_(SS)” configuration.

FIG. 7B illustrates semiconductor structure 702 where an additionalpower domain is included and an additional shielding MIM capacitor isused to provide EM shielding as well as acting as a decoupling capacitorfor the additional power domain. Semiconductor structure 702 includes:conductive line 753 formed in a first metallization layer (e.g., M1metallization layer of an interposer structure); conductive lines 765,766, 767, 768, and 769 formed in a second metallization layer (e.g., M2metallization layer of an interposer structure); a first shielding MIMcapacitor structure 790 including a top capacitor electrode 791, abottom capacitor electrode 792, and a dielectric layer 793 formedbetween the two capacitor electrodes; a second shielding MIM capacitorstructure 794 sharing a top capacitor electrode 791 with first shieldingMIM capacitor structure 790, a bottom capacitor electrode 796, and adielectric layer 793 formed between the two capacitor electrodes; athird shielding MIM capacitor structure 798 also sharing a top capacitorelectrode 791 with first shielding MIM capacitor structure 790, a bottomcapacitor electrode 799, and a dielectric layer 795 formed between thetwo capacitor electrodes; and vias 743, 744, 745, and 746. Vias 743,744, 745, and 746 provide electrical connections between respectiveconductive lines and capacitor electrodes and are not described here indetail for simplicity. Compared to semiconductor structure 700 describedabove in FIG. 7A, FIG. 7B provides an additional power domain formed byconductive lines 765 and 766. For example, conducting lines 769 and 765can be electrically connected to V_(DD1) and V_(DD2) respectively. Insome embodiments, conducting lines 760 and 762 can be electricallyconnected to different electrical potentials, respectively. In someembodiments, conducting lines 766 and 768 can be electrically connectedto different electrical potentials, respectively. Additional shieldingMIM capacitor 790 not only provides EM shielding between conductivelines 767 and 753 and other structures of the semiconductor device, butalso serves as a decoupling capacitor for power lines 762 and 763.

FIG. 8 illustrates a semiconductor structure 800 which includesshielding MIM capacitors for improved EM shielding and also reducedparasitic capacitance in semiconductor devices, according to someembodiments. These capacitor configurations can be applied to othersuitable semiconductor structures where EM shielding and parasiticcapacitance reduction are desired. By biasing a capacitor electrode toelectrically float and the other capacitor electrode to ground and toform two capacitors in series, parasitic capacitances between aconductive line and ground can be reduced.

Semiconductor structure 800 includes: conductive lines 851 and 852formed in a first metallization layer (e.g., M1 metallization layer ofan interposer structure); conductive lines 860, 861, 862, 863, and 864formed in a second metallization layer (e.g., M2 metallization layer ofthe interposer structure); a first shielding MIM capacitor structure 810including a top capacitor electrode 811, a bottom capacitor electrode812, and a dielectric layer 813 formed between the two capacitorelectrodes; a second shielding MIM capacitor structure 820 including atop capacitor electrode 821, a bottom capacitor electrode 822, and adielectric layer 823 formed between the two capacitor electrodes; athird shielding MIM capacitor structure 830 including a top capacitorelectrode 831, a bottom capacitor electrode 832, and a dielectric layer833; and vias 840, 841, 842, and 843. Vias 840, 841, 842, and 843provide electrical connections between respective conductive lines andcapacitor electrodes and are not described here in detail forsimplicity. In some embodiments, conductive lines 861 and 863 can bebiased to V_(SS). In some embodiments, conductive lines 860 and 865 areboth connected to V_(DD) of the integrated circuit. In some embodiments,conductive lines 851 and 862 are signal carrying lines emitting EMsignals. In some embodiments, conductive lines can be connected tosignal sources and transmit time-varying signals. Shielding MIMcapacitor 810 provides EM shielding between conductive lines 851 andother components of the circuit structure such as conductive lines 860and 862. Shielding MIM capacitor 830 not only provides EM shieldingcapability but also serves as a decoupling capacitor for the powerdomain formed by conductive layers 863 and 865.

The configuration of shielding MIM capacitor 820 provides additionalbenefits by not only providing EM shielding for conductive line 862, butalso reduces the parasitic capacitance between conductive line 862 toground. As shown in FIG. 8 , top capacitor electrode 821 is biased toelectrically floating and bottom capacitor electrode 822 is biased toV_(SS) through via 841. As seen from the signal path between conductiveline 862 to conductive line 861, a first capacitor C₁ (schematicallyillustrated in FIG. 8 using dotted lines) is induced between conductiveline 862 and top capacitor electrode 821, and a second capacitor C₂(schematically illustrated in FIG. 8 using dotted lines) is formedbetween top and bottom capacitor electrodes 821 and 822. The first andsecond capacitors C₁ and C₂ are connected in series. The totalcapacitance

$C_{total} = \frac{C_{1}*C_{2}}{C_{1} + C_{2}}$is less than either C₁ or C₂. Therefore, by inserting shielding MIMcapacitor 820 between conductive lines 861 and 862, EM shielding isimproved and parasitic capacitance between conductive lines and groundis reduced. In addition, because shielding MIM capacitor 820 providesenhanced EM shielding, conductive line 852 can be placed under (e.g.,directly under) conductive line 862 without introducing (or withminimal) cross talk or interference.

In some embodiments, conductive lines 852 and 862 can be signal linesformed in M1 and M2 metallization layers, respectively, and emit EMsignals. In some embodiments, conductive lines 860 and 865 can be powerlines electrically connected to V_(DD) of the integrated circuit.Shielding MIM capacitor structure can prevent cross talk (e.g., EMinterference) between conductive lines 852 and 862 which allows one ormore signal carrying conductive lines to be placed over (e.g., directlyover) another signal carrying conductive line. In addition, conductivelines 861 and 863 provide EM shielding and absorbing capability in thehorizontal direction (e.g., x direction). For example, conductive lines861 and 863 can be set to V_(SS) which absorbs and blocks EM signalspropagating in the −x and x directions. As a result, EM signals emittedby conductive lines 865 can be absorbed and blocked by the conductivelines and shielding MIM capacitor.

FIGS. 9A-9B respectively illustrate semiconductor structure 900 and 902which includes configuration of shielding MIM capacitors that provideimproved EM shielding performance, DC performance, and reduction inelectromigration that in turn improves the lifetime of conducting linesand the overall reliability of the devices. First, induced capacitor C₁and shielding MIM capacitor C₂ described above in FIG. 8 can also absorbinduced current ripples caused by adjacent power line and/or signallines and reduce electrical shocks on conducting lines. As a result, thelifetime of conducting lines can be improved. Second, shielding MIMcapacitors can also reduce electromigration in conducting lines which inturn improves their lifetime. Electromigration is the movement ofconducting material in conductive lines due to high current density, andcan eventually cause breaks in conducting lines. Because shielding MIMcapacitors provide enhanced EM shielding capability, conductive linescan be placed under (e.g., directly under) other conductive lines andseparated by a shielding MIM capacitor. Therefore, more routingresources can be freed and used for other devices. For example, power orsignal lines that are originally formed in only one metallization layercan be formed in more than two metallization layers, therefore reducingcurrent densities in conductive lines. Reduced current density providesless current induced in adjacent conductive lines and in turn reduceselectromigration. Reduced current density in a conducting line alsoreduces the conducting line's own electromigration and results inenhanced device reliability.

FIG. 9A illustrates a semiconductor structure 900 which includesshielding MIM capacitor structures for improved EM shielding andimproved device reliability by improving DC performance and reducingelectromigration. Semiconductor structure 900 includes: conductive lines951, 952, and 953 formed in a first metallization layer (e.g., M1metallization layer of an interposer structure); conductive lines 960,961, 962, 963, and 964 formed in a second metallization layer (e.g., M2metallization layer of the interposer structure); a first shielding MIMcapacitor structure 910 and a second shielding MIM capacitor structure920 sharing a common bottom capacitor electrode 912; and vias 940, 941,942, and 943. Vias 940, 941, 942, and 943 provide electrical connectionsbetween respective conductive lines and capacitor electrodes and are notdescribed here in detail for simplicity. In some embodiments, conductivelines 961 and 964 can be biased to V_(SS). In some embodiments,conductive lines 960 and 963 are both connected to V_(DD). In someembodiments, conductive lines 951 and 962 are signal carrying linesemitting EM signals. Shielding MIM capacitor 910 provides EM shieldingbetween conductive lines 951 and other components of the circuitstructure. Shielding MIM capacitor 910 not only provides EM shieldingcapability but also serves as decoupling capacitor for the power domainformed by conductive layers 960 and 961.

Similar to the induced capacitor C₁ described above in FIG. 8 ,conducting line 962 and shielding MIM capacitor 920 can also form aninduced capacitor to improve DC performance and reduce electromigration.By incorporating shielding MIM capacitor 920, routing space under (e.g.,directly under) conducting line 962 can be utilized. For example,conducting line 951 can be formed under (e.g., directly under)conducting line 962, which in turn frees up routing space to the rightof conducting lines 951 and 962 for other devices or structures. Forexample, conducting lines 952, 953, 963, and 964 can be formed utilizingthe routing space in both M1 and M2 metallization layers. By connectingconducting lines 952 and 963, the current density in each wire can beless compared to transmitting power through a single wire. As describedabove, conducting lines 952 and 963 are connected through via 942, whileconducting lines 964 and 953 are connected through via 943. In someembodiments, conducting lines can also be signal carrying lines, such asconducting line 954 and 965 illustrated in semiconductor structure 902of FIG. 9B.

FIG. 10 is an illustration of a method 1000 for forming variousshielding MIM capacitors in semiconductor structures, according to someembodiments. Operations of method 1000 can be performed in a differentorder and/or vary. Variations of method 1000 are within the scope of thepresent disclosure.

Method 1000 begins at operation 1002 by forming a first metallizationlayer on a substrate and forming conducting lines in the firstmetallization layer, according to some embodiments. In some embodiments,a first metallization layer can be blanket deposited on the substrate,and at least a portion of the first metallization layer is patterned toform conducting lines. In some embodiments, a dielectric layer isdeposited on the substrate and pattered to form trenches, and conductingmaterial is deposited into the trenches to form conducting lines.Conducting lines can be formed using conductive materials such as, forexample, copper, aluminum, tungsten, silver, cobalt, metal silicides,highly-conductive tantalum nitride, other suitable metal or metalalloys, and/or combinations thereof. In some embodiments, the firstmetallization layer can be a metal 1 layer (i.e., M1) of aback-end-of-line (BEOL) interconnect structure. The M1 metal layer isprovided here as an example and in some embodiments, conducting linescan be formed in other metallization layers. In some embodiments, thefirst metallization layer can be other metal layers of a BEOL structure.Conducting lines can be used to provide electrical connection to passivedevices such as capacitors, bumps, or connected to active devices suchas one or more device terminals (e.g., gate structures and source/drainstructures of semiconductor devices). In some embodiments, the firstmetallization layer can be formed using any suitable deposition processsuch as, for example, physical vapor deposition (PVD), atomic layerdeposition (ALD), molecular beam epitaxy (MBE), high density plasmachemical vapor deposition (HDPCVD), metal organic CVD (MOCVD), remoteplasma CVD (RPCVD), plasma-enhanced CVD (PECVD), electroplating,electroless plating, other suitable methods, and/or combinationsthereof. A patterning process of the first metallization layer to formconducting lines can include photolithography and etch processes. Thephotolithography process can include forming a photoresist layeroverlying the deposited first metallization layer, exposing the resistto a pattern, performing post-exposure bake processes, and developingthe resist to form a masking element including the resist. The maskingelement can then be used to protect regions of the first metallizationlayer while an etch process removes exposed metallization material andforming conducting lines. The etch process can be a reactive ion etch(ME) or any other suitable process. Examples of the first metallizationlayer can be M1 layers described in FIGS. 4A-9B.

In operation 1004, one or more dielectric layers are formed on the firstmetallization layer, according to some embodiments. One or moredielectric layers can be formed on the substrate and the firstmetallization layer including the conducting lines. The one or moredielectric layers can also fill openings formed in the firstmetallization layer. In some embodiments, a dielectric layer of the oneor more dielectric layers is substantially coplanar with top surfaces ofthe first metallization layer. The one or more dielectric layers can beformed using any suitable dielectric material such as, for example,silicon oxide, spin-on-glass, SiN_(x), silicon oxynitride, FSG, a low-kdielectric material, any other suitable insulating material, orcombinations thereof. In some embodiments, the dielectric layers can beformed using any suitable deposition process such as, for example, PVD,ALD, MBE, HDPCVD, MOCVD, RPCVD, PECVD, other suitable methods, and/orcombinations thereof. Examples of one or more dielectric layers can beinsulating material layer 122 b described above in FIG. 1 .

In operation 1006, a shielding MIM capacitor is formed in the one ormore dielectric layers, according to some embodiments. A bottomcapacitor electrode can be formed in the one or more dielectric layers.The process for forming a bottom capacitor electrode can include, but isnot limited to, depositing another dielectric layer of the one or moredielectric layers, patterning and etching the another dielectric layerto form trenches, depositing conducting material in the trenches,performing a planarization process (e.g., a chemical mechanicalpolishing (CMP) process) such that top surfaces of the depositedconducting material and the another dielectric layer is substantiallycoplanar. The deposition and patterning process can be similar to thedeposition processes described above in operation 1002 and 1004. Thepatterning process can form a bottom capacitor electrode with nominaldimensions. For example, a bottom capacitor electrode can be formedsimilar to bottom capacitor electrodes of shielding MIM capacitors 300and 302 described in FIGS. 3A and 3B, and bottom capacitor electrodes282, 482, 582, 682, 782, 785, 792, 796, 799, 812, 822, 832, and 912,described above in FIGS. 2-9B.

Formation of the shielding MIM capacitor further includes forming acapacitor dielectric on the bottom capacitor electrode. Forming thecapacitor dielectric can include, but is not limited to, blanketdepositing a capacitor dielectric material, patterning and etching thedeposited capacitor dielectric material, and performing a planarizationprocess (e.g., a CMP process). The capacitor dielectric material can beformed using silicon nitride, silicon oxide, hafnium oxide, othersuitable dielectric material, and/or combinations thereof. In someembodiments, the capacitor dielectric material can be formed using anysuitable high-k material (e.g., material with a dielectric constantgreater than 3.9). The capacitor dielectric material can be formed usingany suitable deposition method. For example, the capacitor dielectricmaterial can be deposited using methods similar to the deposition of theone or more dielectric layers above in operation 1004. Examples of thecapacitor dielectric layer can be dielectric layers 283, 483, 583, 683,783, 813, 823, and 833, described above in FIGS. 2-8 . Examples of thecapacitor dielectric layer can also be capacitor dielectrics inshielding MIM capacitor 910 described in FIGS. 9A and 9B.

A top capacitor electrode can be formed on the capacitor dielectriclayer. The process for forming the top capacitor electrode can besimilar to the process for forming the bottom capacitor electrode and isnot described in detail here for simplicity. Examples of top capacitorelectrodes can be top capacitor electrodes 281, 481, 581, 681, 781, 791,811, 821, 831, and top capacitor electrodes of shielding MIM capacitor910, described above in FIGS. 2-9B. After the top capacitor electrode isformed, dielectric layers can be formed on the shielding MIM capacitorand a planarization process can be performed. These dielectric layerscan be a portion of the one or more dielectric layers described above inoperation 1004.

In operation 1008, a second metallization layer is blanket deposited onthe substrate, and at least a portion of the second metallization layeris patterned to form conducting lines, according to some embodiments. Insome embodiments, a dielectric layer is deposited on the one or moredielectric layers of operation 1004 and pattered to form trenches.Conducting material is then deposited into the trenches to formconducting lines in the second metallization layer. Processes forforming the second metallization layer can be similar to processes usedto form the first metallization layer described above in operation 1002and are not described in detail here for simplicity. In structures wherethe first metallization layer is an M1 metallization layer, the secondmetallization layer can be an M2 metallization layer or othermetallization layers above the M1 metallization layer. In someembodiments, the second metallization layer can be any metallizationlayers above the first metallization layer. For example, the secondmetallization layer can be M3, M4, M5 metallization layers of asemiconductor structure. Examples of second metallization layer can beM2 layers described in FIGS. 4A-9B.

In operation 1010, vias can be formed to electrically connect one ormore conducting lines to the shielding MIM capacitor, according to someembodiments. Openings are formed in dielectric materials andsubsequently filled with conductive material to form vias that connectcapacitor electrodes to various components of the semiconductorstructures. Using an etching mask, etching processes can be performed onexposed one or more dielectric layers to form openings. The etchingprocesses can be dry etching processes such as, for example, an RIEand/or other suitable processes. In some embodiments, the etchingprocesses can be wet chemical etching processes. In some embodiments,multiple layers of dielectric material need to be removed and one ormore etching processes may be needed, where each process can be selectedfor etching a specific type of dielectric material. In some embodiments,the etching process can continue until the desired metallization layersare exposed.

The formed openings are then filled with conductive material, accordingto some embodiments. In some embodiments, conductive materials can beformed using copper, tungsten, cobalt, aluminum, other suitable metals,and/or combinations thereof. In some embodiments, the conductivematerials deposited in each opening or trench can be the same. In someembodiments, different conductive materials can be deposited intodifferent trenches. In some embodiments, any suitable deposition processcan be used such as, for example, ALD, MBE, HDPCVD, MOCVD, RPCVD, PECVD,electroplating, electroless plating, other suitable methods, and/orcombinations thereof. In some embodiments, after the openings are filledwith conductive material, a planarization process (e.g., a CMP process)can be used to remove excessive conductive material and planarize thetop surfaces of the vias and one or more dielectric layers. In someembodiments, a capacitor electrode can be electrically connected to aground level. In some embodiments, a capacitor electrode can beelectrically connected to an electrical floating level. For example, topand bottom capacitor electrodes can be respectively electricallyconnected to a ground level and an electrical floating level, such asthe shielding MIM capacitor configuration described in FIGS. 4A and 4B.In some embodiments, both the top and bottom capacitor electrodes areconnected to a ground level, such as the shielding MIM capacitorconfiguration described in FIG. 6 .

The preset disclosure also provides a computer-readable storage mediumencoded with a computer program to be executed by a computer to design asemiconductor device. The program instructions on the computer-readablestorage medium provide for carrying out the execution of floor-planning,placement, and routing of shielding MIM capacitors, insertion of viasand conducting lines, and placement and routing of interconnectedcomponents of the semiconductor device. The operations in the design ofa semiconductor device incorporating shielding MIM capacitors can beimplemented in a wide variety of configurations and architectures.Therefore, some or all of the operations in the design andimplementation of the shielding MIM capacitor can be performed inhardware, in software or both.

First, information can be provided to the computer-aided design (CAD)layout system. Design netlist is provided along with design informationon shielding MIM capacitors, conducting lines, and other components ofan interposer structure. This data is input to the CAD tool, which maybe an automatic place and route (APR) tool according to someembodiments. Various other suitable CAD tools can also be used. The datais forwarded into a data receiving unit and temporarily stored on amemory device. The design netlist may include design information oninterconnected active components of a semiconductor device which may bean integrated circuit or other semiconductor device. The information onconducting lines can include locations of conducting lines, voltagessupplied to the conducting lines, the type and frequency of signalscarried in the conducting lines, the strength of EM signals emitted bythe conducting lines, dimensions of the conducting lines, and any othersuitable information.

A layout design system that implements the APR process scans the circuitlayout design to determine conducting lines that need to be shielded. Insome embodiments, the conductive lines in various metallization layersare checked, and signal or power lines with undesirably high EM signalemission are selected to be shielded. In some embodiments, theconducting lines for standard cells are selected according to certaincriteria, e.g., threshold for comparing the EM emission of a conductiveline.

A layout design system implementing the APR process can identify thepower lines, ground lines, conducting lines, available routing spaces,connections of different structures and arrange them such thatconducting lines requiring EM shielding can be identified and shieldingMIM capacitors can be inserted and arranged.

The shielding MIM capacitor circuit design and/or implementation processdescribed above can be carried out by method 1100 of FIG. 11 andexemplary computer system 1200 of FIG. 12 , as described below.

FIG. 11 is an illustration of an exemplary method 1100 for circuitfabrication, according to some embodiments. Operations of method 1100can also be performed in a different order and/or vary. Variations ofmethod 1100 should also be within the scope of the present disclosure.

In operation 1101, a GDS file is provided. The GDS file can be generatedby an EDA tool and include the standard cell structures that havealready been optimized using the disclosed method. The operationdepicted in 1101 can be performed by, for example, an EDA tool thatoperates on a computer system, such as computer system 1100 describedabove.

In operation 1102, photomasks are formed based on the GDS file. In someembodiments, the GDS file provided in operation 1101 is taken to atape-out operation to generate photomasks for fabricating one or moreintegrated circuits. In some embodiments, a circuit layout included inthe GDS file can be read and transferred onto a quartz or glasssubstrate to form opaque patterns that correspond to the circuit layout.The opaque patterns can be made of, for example, chromium or othersuitable metals. Operation 1102 can be performed by a photomaskmanufacturer, where the circuit layout is read using a suitable software(e.g., EDA tool) and the circuit layout is transferred onto a substrateusing a suitable printing/deposition tool. The photomasks reflect thecircuit layout/features included in the GDS file.

In operation 1103, one or more circuits are formed based on thephotomasks generated in operation 1102. In some embodiments, thephotomasks are used to form patterns/structures of the circuit containedin the GDS file. In some embodiments, various fabrication tools (e.g.,photolithography equipment, deposition equipment, and etching equipment)are used to form features of the one or more circuits.

FIG. 12 is an illustration of an exemplary computer system 1200 in whichvarious embodiments of the present disclosure can be implemented,according to some embodiments. Computer system 1200 can be anywell-known computer capable of performing the functions and operationsdescribed herein. For example, and without limitation, computer system1200 can be capable of performing planning, routing, and placingintegrated circuit components in semiconductor device design. Computersystem 1200 can be used, for example, to execute one or more operationsin method 1100 and the designing processes of shielding MIM capacitordevices.

Computer system 1200 includes one or more processors (also calledcentral processing units, or CPUs), such as a processor 1204. Processor1204 is connected to a communication infrastructure or bus 1206.Computer system 1200 also includes input/output device(s) 1203, such asmonitors, keyboards, pointing devices, etc., that communicate withcommunication infrastructure or bus 1206 through input/outputinterface(s) 1202. An EDA tool can receive instructions to implementfunctions and operations described herein—e.g., method 1100 of FIG. 11—via input/output device(s) 1203. Computer system 1200 also includes amain or primary memory 1208, such as random access memory (RAM). Mainmemory 1208 can include one or more levels of cache. Main memory 1208has stored therein control logic (e.g., computer software) and/or data.In some embodiments, the control logic (e.g., computer software) and/ordata can include one or more of the operations described above withrespect to method 1100 of FIG. 11 .

Computer system 1200 can also include one or more secondary storagedevices or memory 1210. Secondary memory 1210 can include, for example,a hard disk drive 1212 and/or a removable storage device or drive 1214.Removable storage drive 1214 can be a floppy disk drive, a magnetic tapedrive, a compact disk drive, an optical storage device, tape backupdevice, and/or any other storage device/drive.

Removable storage drive 1214 can interact with a removable storage unit1218. Removable storage unit 1218 includes a computer usable or readablestorage device having stored thereon computer software (control logic)and/or data. Removable storage unit 1218 can be a floppy disk, magnetictape, compact disk, DVD, optical storage disk, and/any other computerdata storage device. Removable storage drive 1214 reads from and/orwrites to removable storage unit 1218.

According to some embodiments, secondary memory 1210 can include othermeans, instrumentalities or other approaches for allowing computerprograms and/or other instructions and/or data to be accessed bycomputer system 1200. Such means, instrumentalities or other approachescan include, for example, a removable storage unit 1222 and an interface1220. Examples of the removable storage unit 1222 and the interface 1220can include a program cartridge and cartridge interface (such as thatfound in video game devices), a removable memory chip (such as an EPROMor PROM) and associated socket, a memory stick and USB port, a memorycard and associated memory card slot, and/or any other removable storageunit and associated interface. In some embodiments, secondary memory1210, removable storage unit 1218, and/or removable storage unit 1222can include one or more of the operations described above with respectto method 1100 of FIG. 11 .

Computer system 1200 can further include a communication or networkinterface 1224. Communication interface 1224 enables computer system1200 to communicate and interact with any combination of remote devices,remote networks, remote entities, etc. (individually and collectivelyreferenced by reference number 1228). For example, communicationinterface 1224 can allow computer system 1200 to communicate with remotedevices 1228 over communications path 1226, which can be wired and/orwireless, and which can include any combination of LANs, WANs, theInternet, etc. Control logic and/or data can be transmitted to and fromcomputer system 1200 via communication path 1226.

The operations in the preceding embodiments can be implemented in a widevariety of configurations and architectures. Therefore, some or all ofthe operations in the preceding embodiments—e.g., method 1100 of FIG. 11—can be performed in hardware, in software or both. In some embodiments,a tangible apparatus or article of manufacture comprising a tangiblecomputer useable or readable medium having control logic (software)stored thereon is also referred to herein as a computer program productor program storage device. This includes, but is not limited to,computer system 1200, main memory 1208, secondary memory 1210 andremovable storage units 1218 and 1222, as well as tangible articles ofmanufacture embodying any combination of the foregoing. Such controllogic, when executed by one or more data processing devices (such ascomputer system 1200), causes such data processing devices to operate asdescribed herein. In some embodiments, computer system 1200 is installedwith software to perform operations in the manufacturing of photomasksand circuits, as illustrated in method 1200 of FIG. 12 (describedbelow). In some embodiments, computer system 1200 includeshardware/equipment for the manufacturing of photomasks and circuitfabrication. For example, the hardware/equipment can be connected to orbe part of element 1228 (remote device(s), network(s), entity(ies)) ofcomputer system 1200

Various embodiments in accordance with this disclosure providesmechanisms of forming a shielding MIM capacitor structure to provide EMshielding for EM emissions in semiconductor devices. In someembodiments, shielding MIM capacitor can mitigate power line currentripple or decouple one circuit component from another component of anelectrical circuit structure such as an interposer structure. ShieldingMIM capacitors includes parallel conductive plates that can act asFaraday shields to shield devices and structures from EM emission sourceand prevent EM interference in other circuit components, such as devicesformed on another die or other components coupled to the interposerstructure. Without using additional mask layers, the shielding MIMcapacitor structure can be incorporated into decoupling capacitors forpower/ground supplies to eliminate routing penalty and minimize thedevice footprint. In accordance with some embodiments of thisdisclosure, the shielding MIM capacitor structure provides, among otherthings, benefits of: (i) improved power, performance, area (PPA) designby strategically placing shielding MIM capacitors between metal layersto serve as a shielding capacitor, a decoupling capacitor, or both; (ii)compatibility with current layout design and process flow without theneed for additional masks; and (iii) diverse EM shielding protection invertical direction for upper/lower metallization layers and horizontaldirection for adjacent structures.

In some embodiments, a semiconductor interposer device includes asubstrate and a first metallization layer formed on the substrate. Afirst dielectric layer is formed on the first metallization layer and asecond metallization layer is formed on the substrate. A firstconducting line is formed in the first metallization layer and secondand third conducting lines are formed in the second metallization layer.A MIM capacitor is formed in the first dielectric layer and over thefirst conducting line. The MIM capacitor includes (i) a top capacitorelectrode in the first dielectric layer and electrically coupled to thesecond conducting line; (ii) a bottom capacitor electrode in the firstdielectric layer and above the first conducting line, wherein the bottomcapacitor electrode is configured to be electrically floating; and (iii)a second dielectric layer between the top and bottom capacitorelectrodes.

In some embodiments, a semiconductor interposer device includes asubstrate and a first metallization layer formed on the substrate. Thesemiconductor interposer device also includes a first dielectric layerformed on the first metallization layer and a second metallization layerformed on the substrate. A first conducting line is formed in the firstmetallization layer and second, third, and fourth conducting lines areformed in the second metallization layer. The third conducting line isbetween the second and fourth conducting lines. The semiconductorinterposer device also includes a MIM capacitor formed in the firstdielectric layer and over the first conducting line. The MIM capacitorincludes (i) a top capacitor electrode in the first dielectric layer andelectrically coupled the second conducting line; (ii) a bottom capacitorelectrode in the first dielectric layer and above the first conductingline, the bottom capacitor electrode electrically coupled to the fourthconducting line; and (iii) a second dielectric layer between the top andbottom capacitor electrodes.

In some embodiments, a method of forming a semiconductor structureincludes providing a substrate and forming a first conducting line in afirst metallization layer on the substrate. The method also includesdepositing a first dielectric layer on the first metallization layer andforming a metal-insulator-metal (MIM) capacitor in the first dielectriclayer and over the first conducting line. Forming the MIM capacitorincludes (i) depositing first and second capacitor electrodes in thefirst dielectric layer and above the first conducting line; (ii)depositing a second dielectric layer between the first and secondcapacitor electrodes; (iii) electrically coupling the first capacitorelectrode to a ground voltage level; and (iv) electrically coupling thesecond capacitor electrode to an electrically floating level or theground voltage level. The method further includes forming a secondconducting line on the first dielectric layer and in a secondmetallization layer.

It is to be appreciated that the Detailed Description section, and notthe Abstract of the Disclosure, is intended to be used to interpret theclaims. The Abstract of the Disclosure section may set forth one or morebut not all exemplary embodiments contemplated and thus, are notintended to be limiting to the subjoined claims.

The foregoing disclosure outlines features of several embodiments sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art will appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art will also realize that suchequivalent constructions do not depart from the spirit and scope of thepresent disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the subjoined claims.

What is claimed is:
 1. A semiconductor device, comprising: a firstmetallization layer; a first dielectric layer formed on the firstmetallization layer; a second metallization layer formed over the firstmetallization layer; a conducting line formed in the secondmetallization layer; and a metal-insulator-metal (MIM) capacitor formedin the first dielectric layer and between the first and secondmetallization layers, the MIM capacitor comprising: first, second, andthird bottom capacitor electrodes in the first dielectric layer; a topcapacitor electrode extending above the first, second, and third bottomcapacitor electrodes, wherein the top capacitor electrode is coupled toa ground voltage reference line; and a second dielectric layer betweenthe top electrode and the first, second, and third bottom capacitorelectrodes.
 2. The semiconductor device of claim 1, wherein theconducting line comprises a signal-carrying line.
 3. The semiconductordevice of claim 1, wherein the conducting line is electrically coupledto the ground voltage reference line.
 4. The semiconductor device ofclaim 1, wherein the conducting line is above the second bottomcapacitor electrode.
 5. The semiconductor device of claim 1, wherein thefirst and third bottom capacitor electrodes are electrically coupled tofirst and second source power lines, respectively.
 6. The semiconductordevice of claim 1, wherein the second bottom capacitor electrode iselectrically floating.
 7. The semiconductor device of claim 1, furthercomprising first and second vias extending through the top capacitorelectrode and in contact with the first and third bottom capacitorelectrodes, respectively.
 8. The semiconductor device of claim 1,wherein the first metallization layer is an M1 metallization layer. 9.The semiconductor device of claim 1, wherein the second metallizationlayer is an M2 metallization layer.
 10. The semiconductor device ofclaim 1, further comprising an other conducting line formed in the firstmetallization layer, wherein the other conducting line is below thefirst bottom capacitor electrode.
 11. A semiconductor device,comprising: a first metallization layer; a second metallization layerformed over the first metallization layer; and a metal-insulator-metal(MIM) capacitor formed between the first and second metallizationlayers, the MIM capacitor comprising: first, second, and third bottomcapacitor electrodes, wherein the second bottom capacitor electrode iselectrically floating; and a top capacitor electrode extending above thefirst, second, and third bottom capacitor electrodes, wherein the topcapacitor electrode is coupled to a ground voltage reference line. 12.The semiconductor device of claim 11, further comprising a conductingline formed in the second metallization layer and above the secondbottom capacitor electrode, wherein the conducting line is configured toemit electromagnetic signals.
 13. The semiconductor device of claim 11,wherein the first and third bottom capacitor electrodes are electricallycoupled to first and second source power lines, respectively.
 14. Thesemiconductor device of claim 11, further comprising first and secondvias extending through the top capacitor electrode and in contact withthe first and third bottom capacitor electrodes, respectively.
 15. Thesemiconductor device of claim 11, wherein the first and secondmetallization layers are M1 and M2 metallization layers, respectively.16. A semiconductor device, comprising: a first conducting line in afirst metallization layer of a back-end-of-line (BEOL) interconnectstructure; a metal-insulator-metal (MIM) capacitor, comprising: first,second, and third bottom capacitor electrodes, wherein: the first andthird bottom capacitor electrodes are electrically coupled to first andsecond source power lines, respectively; and the second bottom capacitorelectrode is electrically floating; and a top capacitor electrodeextending above the first, second, and third bottom capacitorelectrodes, wherein the top capacitor electrode is coupled to a groundvoltage reference line; and a second conducting line in a secondmetallization layer of the BEOL interconnect structure.
 17. Thesemiconductor device of claim 16, wherein first and conducting linescomprise signal-carrying lines configured to emit electromagneticsignals.
 18. The semiconductor device of claim 16, wherein the secondconducting line is above the second bottom capacitor electrode.
 19. Thesemiconductor device of claim 16, further comprising first and secondvias extending through the top capacitor electrode and in contact withthe first and third bottom capacitor electrodes, respectively.
 20. Thesemiconductor device of claim 16, wherein the first and secondconducting lines are coupled to a third source power line and the groundvoltage reference line, respectively.